₹ 125000 – ₹ 196000 exc. gst
1. Preparation Method
CVD Method and Metal Assisted Exfoliation (MAE Process)
2. Characterizations
|
Monolayer CVD Graphene (Graphene Factory) |
|
|
Transparency |
> 97% |
|
Graphene Coverage |
100% with sporadic adlayers |
|
FET mobility* |
>2700 cm2/ (V∙s) |
|
Sheet resistance* |
430 ± 50 Ω/sq |
|
Grain size |
>40 μm |
|
Raman D/G ratio |
Indistinguishable to 0.03 |
| Si/SiO2 Substrate | |
| Type/Doping |
P/B |
| Wafer Thickness | 700 – 750 μm |
| Oxide Thickness | 300 nm |
| Resistivity | 1-25 (Ω -cm) |
| Orientation | <1-0-0> |
| Growth Method | CZ |
| Metal Impurities | 1.00e10 – 5.00e10 (at/cm2)Substrate |
Typical Optical Image of Monolayer CVD Graphene (Graphene Factory)
Typical Raman Spectrum of Monolayer CVD Graphene (Graphene Factory)
* The indicated product metrics are generic to our transfer process. For all graphene-on-copper products, the displayed range represents electronic data that we have obtained using our in-house transfer capabilities to transfer graphene to SiO2. Your own mobility and sheet resistance numbers will depend entirely on the transfer methods that you use, and the resultant quality of your transfers.
3. Application Fields
1) Catalyst
2) Supercapacitors
3) Solar energy
4) Graphene semiconductor chips
5) Conductive graphene film
6) Graphene computer memory
7) Biomaterials
8) Transparent conductive coatings
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| Type | 1 Layer |
|---|---|
| Size | Dia : 6 inch, Dia : 8 inch |
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