CVD Graphene on Silicon Substrate
₹ 17000 – ₹ 27000 exc. gst
CVD Graphene on Silicon Substrate
YAAVIK MATERIALS AND ACS MATERIALS PRESENTS CVD Graphene on Silicon Substrate in India.
CAS No.: 7782-42-5 (graphene), 7440-21-3 (silicon)
Ultra-thin graphene on copper substrates using CVD. We then use PMMA method to transfer the copper-based graphene to a silicon substrate. Graphene on silicon substrate is available in four graphene thicknesses: 1 layer, 2 layers, 3-5 layers, and 6-8 layers. We offer 1cm x 1cm substrates and 1in x 1in substrates. We are also able to transfer graphene on these substrates using metal-assisted exfoliation (MEA) method. Please contact us today for details on our graphene on silicon substrate products.
Our exceptional graphene is suitable for all types of research. Graphene on silicon is paving the way to industrialization of graphene. All our CVD graphene samples conform to a stringent quality controls to ensure excellent consistency and reproducibility. We have single-, double-, and multilayer graphene sheets transferred onto silicon substrates. Research laboratories around the world trust ACS Material to provide the highest-quality graphene available on the market at the most reasonable prices.
Sheet Resistance |
<600Ω/sq |
Custom Order |
<300Ω/sq |
Transparency |
>95% |
We can also provide graphene sheets made by CVD Method and Metal Assisted Exfoliation (MAE Process).
Preparation Method:
- Copper based graphene is prepared by CVD method.
- Graphene is transferred from copper to silicon substrate.
Silicon Wafer:
Wafer Tickness:
|
625 µm
|
Resistivity:
|
<0.01 ohm-cm
|
Type/Dopant:
|
P
|
Orientation:
|
<100>
|
Front Surface:
|
Polished
|
Back Surface:
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Etched
|
Conditions for safe storage
Keep the products in a dry and low oxygen (or oxygen-free) container at moderate temperature (<30°C).
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Product Detail
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