₹ 142000 exc. gst
CAS-No.: 12138-09-9 (WS2); 60676-86-0 (SiO2); 1344-28-1 (Al2O3); 1344-28-1 (Sapphire)
CVD method monolayer WS2 is a promising member of the 2-D graphene-like materials series at . WS2 is a member of the transition metal dichalcogenide group and is also commonly known as tungsten sulfide and tungsten (IV) sulfide. Among 2-D materials with tailored morphologies designed to enhance their performance in nanoelectronics, WS2 stands out as a particularly promising candidate.
WS2 monolayer films demonstrate superior optical properties, indicated by exceptional line widths and photoluminescent quantum yield. In addition, WS2 monolayer films exhibit large spin-orbit coupling and larger valence band splitting, leading many researchers to believe that WS2 monolayer films may exhibit exceptional band-edge spin splittings, a strong valley Hall effect, and the magnetic field effects necessary for optoelectronic and spintronic functionalities.
High-quality tungsten disulfide monolayer film from is available as a CVD-grown film on sapphire, Al2O3, or SiO2 substrates. Potential applications include transistors, sensors, and other electronic and photovoltaic devices; whatever your purposes, you’ll be impressed with the performance and consistent quality of CVD method monolayer WS2 provided by .
CVD Method
| Substrate: | SiO2/Al2O3/Sapphire |
| Size: | 9 mm*9 mm |
| Thickness： | 0.6-0.8 nm |
| Diameter range: | 20-50 μm |
Typical Microscope Image of Monolayer WS2 on SiO2 (20-50μm)
Typical Optical Spectrum Image of Monolayer WS2 on SiO2 (20-50μm)
An excellent device material for studying the number of layers and fluorescence effects.
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| Type | Al2O3 Substrate, Sapphire Substrate, SiO2 Substrate |
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