Hexagonal Boron Nitride (h-BN) on Si/SiO2
₹ 160000 – ₹ 230000 exc. gst
Hexagonal Boron Nitride (h-BN) on Si/SiO2
YAAVIK MATERIALS AND ACS MATERIALS PRESENTS Hexagonal Boron Nitride (h-BN) on Si/SiO2 in India.
Product Detail
1. Preparation Method
CVD Method
2. Characterizations
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Monolayer h-BN/hBN
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Transparency
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> 97%
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hBN Coverage
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100% with sporadic adlayers
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Raman Peak
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1370 /cm-1
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Bandgap
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5.97 eV
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Grain size
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>4 μm
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h-BN thickness
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monolayer (0.333nm theoretical)
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Si/SiO2 Substrate
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Type/Doping
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P/B
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Wafer Thickness
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500 +/- 50 μm
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Oxide Thickness
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300 nm
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Resistivity
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1-10 (Ω -cm)
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Orientation
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<1-0-0>
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Growth Method
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CZ
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Metal Impurities
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1.00e10 – 5.00e10 (at/cm2)
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Typical Crystal Diffraction Image of Monolayer h-BN

Typical TEM Image of Monolayer h-BN

Typical Raman Spectrum of Monolayer hBN
* The indicated product metrics are generic to our transfer process. For all our products, the displayed range represents electronic data that we have obtained using our in-house transfer capabilities to transfer hBN to SiO2. Your own metrics will depend entirely on the transfer methods that you use, and the resultant quality of your transfers.
3. Application Fields
1) Proton conductors
2) Fuel cells
3) Water electrolysis
4) Graphene-based devices
4. User Instruction
To ensure the maximum shelf life of your graphene sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
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