YAAVIK MATERIALS AND ACS MATERIALS PRESENTS Hexagonal Boron Nitride (h-BN) on Si/SiO2 in India.
Product Detail
1. Preparation Method
CVD Method
2. Characterizations
Monolayer h-BN/hBN
Transparency
> 97%
hBN Coverage
100% with sporadic adlayers
Raman Peak
1370 /cm-1
Bandgap
5.97 eV
Grain size
>4 μm
h-BN thickness
monolayer (0.333nm theoretical)
Si/SiO2 Substrate
Type/Doping
P/B
Wafer Thickness
500 +/- 50 μm
Oxide Thickness
300 nm
Resistivity
1-10 (Ω -cm)
Orientation
<1-0-0>
Growth Method
CZ
Metal Impurities
1.00e10 – 5.00e10 (at/cm2)
Typical Crystal Diffraction Image of Monolayer h-BN
Typical TEM Image of Monolayer h-BN
Typical Raman Spectrum of Monolayer hBN
* The indicated product metrics are generic to our transfer process. For all our products, the displayed range represents electronic data that we have obtained using our in-house transfer capabilities to transfer hBN to SiO2. Your own metrics will depend entirely on the transfer methods that you use, and the resultant quality of your transfers.
3. Application Fields
1) Proton conductors
2) Fuel cells
3) Water electrolysis
4) Graphene-based devices
4. User Instruction
To ensure the maximum shelf life of your graphene sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
YAAVIK MATERIALS AND ENGG PVT LTD , INDIAN DISTRIBUTOR OF ACS MATERIALS SUPPLIES HIGH QUALITY OF Hexagonal Boron Nitride (h-BN) on Si/SiO2 IN INDIA AT RESONABLE PRICES.
The materials synthesized in fully controlled environment and with proven parameters gives you the best desired results. For more information and customized requirements contact info@yaavikmaterials .com
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